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ECO-PAC 2 IGBT Module
Preliminary Data Sheet
TM
PSIG 75/12 PSI 75/12* PSIS 75/12* PSSI 75/12*
AC 1 L9 T16 X15 NTC X16 IK 10
IC25 = 92 A VCES = 1200 V VCE(sat)typ. = 2.7 V
X15 NTC X16 L9 F1 AC 1 IK 10
OP 9 L9 E2 K10 X16 X13 GH 10 NTC X15 VX 18
IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol
PSI 75/12*
Conditions TVJ = 25C to 150C
PSIS 75/12*
Maximum Ratings 1200 20 V V A A A s W
PSSI 75/12*
LMN S
A IJK
TC = 25C TC = 80C VGE = 15 V; RG = 22 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C Conditions
92 62 100 VCES 10 379
PSIG 75/12
*NTC optional Features
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.7 3.0 4.5 3.2 6.5 V V V
* * * * * * * * * * * * * * *
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 75 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688
3.7 mA 12.5 mA 200 100 70 500 70 9.1 6.7 3.3 0.66 nA ns ns ns ns mJ mJ nF 0.33 K/W K/W
VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 60 A VGE = 15/0 V; RG = 22
Applications
AC and DC motor control AC servo and robot drives power supplies welding inverters
Advantages
Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/12
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 60 A; TVJ = 25C TVJ = 125C Maximum Ratings 103 65 A A Package style and outline
Dimensions in mm (1mm = 0.0394")
PSI
Characteristic Values min. typ. max. 2.28 1.67 41 200 1.32 2.6 V V A ns 0.66 K/W K/W
IF = 60 A; diF/dt = 500 A/s; TVJ = 125C VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K
Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2
PSSI
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
PSIG
PSIS
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/12
120
A
TJ = 25C
VGE =17 V 15 V 13 V 11 V
100
IC
120 A TJ = 125C 100 IC 80 60 40
VGE =17 V 15 V 13 V 11 V
80 60 40
9V
9V
20 0 0,0
81T120
20 0
81T120
0,5
1,0
1,5
2,0
2,5
VCE
3,0 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5 V
VCE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120
A
VCE = 20 V TJ = 25C
180
TJ = 125C
100
IC
A 150 IF 120 90 60 30
81T120
TJ = 25C
80 60 40 20 0
0
DWLP55-12
5
6
7
8
9
10
VGE
11 V
0,5
1,0
1,5
2,0
2,5
VF
3,0 V
3,5
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
120
A
20
V
300
ns
trr
VGE
15
VCE = 600 V IC = 50 A
IRM
80
200
trr
10 40 5
IRM TJ = 125C VR = 600 V IF = 50 A
100
0
81T120
0
50
100
150
200
QG
250 nC
0
81T120
0
200
400
600
A/s 800 -di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSI PSIS PSSI 75/12
24
mJ Eon
120 ns td(on) 90 t Eoff
12 mJ 10 8 6 4
VCE = 600 V VGE = 15 V RG = 22 TJ = 125C
600 Eoff ns 500 td(off) 400 t 300 200 tf
81T120
18
12
tr
60
VCE = 600 V VGE = 15 V RG = 22 TJ = 125C
81T120
6
Eon
30
2
0
100 0
0
0
20
40
60
IC
80
100 A
0
0
20
40
60
80 IC
100 A
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current
ns
20
mJ V = 15 V GE Eon 15
IC = 50 A TJ = 125C
VCE = 600 V
240 td(on) Eon
10 mJ VCE = 600 V
t Eoff
td(off) Eoff
1500 ns 1200 t 900 600 300
180
8 6
VGE = 15 V IC = 50 A TJ = 125C
10
tr
120
4
60
5
2 0
81T120
0
81T120
0 10 20 30 40 50 60 70 80 90 100 RG
0
tf
0 10 20 30 40 50 60 70 80 90 100 RG
0
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor
1 K/W 0,1 ZthJC
120 A 100
ICM
80 60 40 20 0
81T120
RG = 22 TJ = 125C VCEK < VCES
0,01 0,001 0,0001
diode
IGBT
single pulse
VID...75-12P1
0
200
400
600
800 1000 1200 V
VCE
0,00001 0,00001 0,0001
0,001
0,01 t
0,1
s
1
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance RBSOA
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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